M-O-S-F-E-T,合起來叫「金屬-氧化物-半導體場效電晶體」…
依照不同的導電特性又可以分為 NMOS、PMOS、CMOS 三種:
欸等等,大家先別走阿!小編知道要理解這東西可不容易 😅
📌但最近因馬來西亞疫情衝擊,#MOSFET 族群迎來轉單潮
像是 #杰力、#富鼎 等國內大廠都漲很兇啊!
所以,想要增投資知識,當然要了解更多的產業啊 🤓
MOSFET 可說是積體電路中不可或缺的功能元件!
構造的不同,還分為 3 種。至於是哪 3 種,看文章吧 👇👇👇
同時也有10000部Youtube影片,追蹤數超過2,910的網紅コバにゃんチャンネル,也在其Youtube影片中提到,...
n-type semiconductor 在 國立陽明交通大學電子工程學系及電子研究所 Facebook 的精選貼文
IEEE DL Invited Talk - New Channel Materials and Devices Beyond Si CMOS---July 29 am 10:30- 12:00
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If anyone is interested, please feel free to come.
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Date/Time : July 29 (Friday) am 10:30-12:00
Room : 交通大學光復校區工程四館5樓528室
Room 528, Engineering Building 4, NCTU
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Speaker :
Prof. Peter(Peide) Ye
School of Electrical and Computer Engineering, Purdue University, USA
IEEE Fellow
Abstract-
Interface is everything in MOS technology. Most of research in that front can be summarized as metal-semiconductor interface for source/drain contacts and oxide-semiconductor interface for dielectric gating. In this talk, we will review the state-of-the-art technology development in the recent years on III-V and Ge MOS technology by the industrial and academic leaders. Meanwhile, we will also report on some of new progress we made at Purdue University related with these two interfaces including the first GaAs and Ge CMOS circuits demonstration. At or even beyond 5nm node, the device channel must be atomic layer thin to avoid the short channel effects. The emerging 2D materials could be one of the solutions. Interface plays even more important role in these novel materials. We will focus on two 2D semiconducting materials – MoS2 as n-type channel and phosphorene as p-type channel. We will present our newest results on MoS2 with record high drain current and low contact resistance by the substitution doping technique. We will also introduce the unique material properties of the newly pioneered phosphorene and its potential for various device applications.