metal-oxide-semiconductor (MOS) transistors with thick gate oxide (100 nm) ... On the other hand, Kirk effect induced increase in drain avalanche hot. ... <看更多>
「kirk effect mos」的推薦目錄:
kirk effect mos 在 Kirk 效應MOS - 軟體兄弟 的相關結果
Kirk 效應MOS,英文摘要, In this thesis, we discussed hot-carrier effects in n-MOSFET and ... 經過實驗發現,在低壓元件所沒有的克爾克效應(Kirk Effect)會在此 ... ... <看更多>
kirk effect mos 在 行政院國家科學委員會專題研究計畫成果報告- 高電壓矽金氧半 ... 的相關結果
MOS transistors with shallow trench isolation ... CMOS 元件的工作電壓,熱載子引起的元件 ... 8 V,Isub 由於Kirk effect 會再次增加. ... <看更多>
kirk effect mos 在 HV的結構與原理–DDDMOS or LDMOS? - 每日頭條 的相關結果
我們知道MOS的擊穿電壓是在Drain加高電壓,其他三端接地,直到擊 ... 正是由於DDDMOS有kirk-effect的致命問題,所以它的應用非常窄,理論上限制 ... ... <看更多>
kirk effect mos 在 Physical Description of Quasi-Saturation and Impact ... 的相關結果
Index Terms—Drain-extended MOS (DEMOS), impact ioniza- tion, Kirk effect, quasi-saturation. I. INTRODUCTION. CURRENTLY, high-voltage (HV) drain-extended MOS. ( ... ... <看更多>
kirk effect mos 在 kirk effect mos - FHQKH 的相關結果
kirk effect mos. 4/2/2016 · 正是由於DDDMOS有kirk-effect的致命問題,所以它的應用非常窄,理論上限制在20~30V以下,實際上一般在18V以下的Application才會用,而 ... ... <看更多>
kirk effect mos 在 Kirk effect and suppression for 20 ... - Journal of Semiconductors 的相關結果
摘要: For 20 V planar active-gap lateral double-diffused MOSFET (LDMOS), the sectional channel is utilized to decrease the electric field in the n-drift region ... ... <看更多>
kirk effect mos 在 Kirk effect and suppression for 20 V planar active-gap LDMOS 的相關結果
For 20 V planar active-gap lateral double-diffused MOSFET (LDMOS), the sectional channel is utilized to decrease the electric field in the n-drift region below ... ... <看更多>
kirk effect mos 在 博碩士論文行動網 的相關結果
論文摘要在本論文中,探討了三種不同濃度的製程,其輕汲極高壓(HV)金氧半場效電晶體(MOSFET)元件之特性,包含了其基板電流的差異以及克爾克效應(Kirk effect),與受熱載子 ... ... <看更多>
kirk effect mos 在 Effects of gate bias on hot-carrier reliability in drain extended ... 的相關結果
On the other hand, Kirk effect induced increase in drain avalanche hot ... metal-oxide-semiconductor 共MOS兲transistors with thick gate oxide 共100 nm ... ... <看更多>
kirk effect mos 在 laterally diffused metal oxide semiconductor transistors on ... 的相關結果
Process flow of conventional high-voltage MOS transistor .................... 40 ... lines shift towards drain terminal due to the Kirk effect. ... <看更多>
kirk effect mos 在 Lecture 18 Bipolar Transistors a) Introduction b) Design (I) 的相關結果
MOS. Klimeck – ECE606 Fall 2012 – notes adopted from Alam ... The Kirk effect occurs at high current densities in a bipolar transistor. The effect is due. ... <看更多>
kirk effect mos 在 Bipolar Transistor 的相關結果
ahead of the MOS field-effect transistor (MOSFET) by a decade. After the ... The Kirk effect limits the peak BJT operating speed (see Fig. 8–21). ... <看更多>
kirk effect mos 在 High Voltage MOSFET Compact Modeling - TechConnect Briefs 的相關結果
Furthermore, a so-called quasi-saturation is found for short-channel devices at high gate and drain bias. One reason for this is the Kirk effect in the drift ... ... <看更多>
kirk effect mos 在 Conference paper ESD Protection Solutions for High Voltage ... 的相關結果
upgrades, HV MOS transistors are equipped with thick ... caused by the Kirk effect in high current bipolar operation is indicated. As shown in Figure 2, ... ... <看更多>
kirk effect mos 在 5.5 Base and Collector transit time effects 的相關結果
The Kirk effect occurs at high current densities and causes a dramatic increase in the transit time of a bipolar transistor. ... <看更多>
kirk effect mos 在 Investigations on Double-Diffused MOS (DMOS) transistors ... 的相關結果
In BCD (Bipolar-CMOS-DMOS) technology for ... DMOS (Double Diffused MOS) transistor because it ... viewed as the Kirk effect in the lateral parasitic. ... <看更多>
kirk effect mos 在 LDMOS compact modeling and the PSPHV model - MOS-AK 的相關結果
CMOS. 32/28nm. (Full symbol = SOI, empty symbol = bulk) ... Kirk effect: The drift region is modulated by current. When current. ... <看更多>
kirk effect mos 在 Double Snapback Characteristics in High-Voltage nMOSFETs ... 的相關結果
charge (ESD), high-voltage nMOSFET, lateral diffused MOS. (LDMOS), latchup. ... vice enters into high-injection condition and the Kirk effect [9] occurs. ... <看更多>
kirk effect mos 在 爾利效應- 維基百科,自由的百科全書 的相關結果
爾利效應(英語:Early effect),又譯厄爾利效應或譯歐萊效應,也稱基區寬度調變 ... 由於MOSFET也有類似的雙極性,MOSFET中也會使用「爾利效應」這一術語來描述類似 ... ... <看更多>
kirk effect mos 在 kirk effect中文 - Startu 的相關結果
防護能力的下降,例如克爾克效應(Kirk-effect)導致保持電壓(holding voltage)太 ... 會用,而到了20V以上幾乎都要用新的結構,也就是LDMOS(Lateral Diffused MOS)了。 ... <看更多>
kirk effect mos 在 SPICE model of LDMOS transistor structure - VUT 的相關結果
High Voltage MOS, LDMOS, MOSFET, DC model, CV model, characterization, BSIM, ... Kirk effect is described as a breakdown of the drain. ... <看更多>
kirk effect mos 在 Kirk Effect | PDF | Bipolar Junction Transistor - Scribd 的相關結果
Kirk Effect - Free download as Word Doc (.doc / .docx), PDF File (.pdf), ... Although we have chosen to illustrate the Kirk effect ... Lecture 6 Mos Fet. ... <看更多>
kirk effect mos 在 Design considerations of high voltage RESURF nLDMOS 的相關結果
In recent years lateral double-diffused MOS transistors (LDMOSFETs) have become the ... Several methods have been proposed to alleviate Kirk effect. ... <看更多>
kirk effect mos 在 Low Switching Loss and Scalable 20-40 V LDMOS Transistors ... 的相關結果
Lateral Double Diffused MOS (LDMOS) transistors are widely used as ... the drain Current Expansion (CE) [1,2] caused by the Kirk effect due to high drain. ... <看更多>
kirk effect mos 在 Improved compact modeling of output conductance and ... - NXP 的相關結果
saturation effects and the Kirk effect, while current spreading is shortly discussed in Section VI. ... involved in bipolar and MOS compact transistor. ... <看更多>
kirk effect mos 在 Proposal of High Reliability LDMOS Structure 的相關結果
a drift region around the drain-side gate edge of the intrinsic MOSFET of an LDMOS, and also to suppress the drain current increase due to Kirk effect. ... <看更多>
kirk effect mos 在 Compact Modeling of Partially Depleted Silicon-on-Insulator ... 的相關結果
MOS transistors has increased in recent years due to the com- ... Kirk effect states that when the injected electron density from. ... <看更多>
kirk effect mos 在 Halvlederkomponenter - UiO 的相關結果
3.4.3 Effects of Temperature and Doping on Mobility 106 ... 6.5.9 MOSFET Scaling and Hot Electron Effects 321 ... 7.7.7 Kirk Effect 391. ... <看更多>
kirk effect mos 在 HV EDMOS Design with Expansion Regime Suppression 的相關結果
Lateral Extended Drain MOSFET (EDMOS) is one of the most popular high ... The expansion effect, sometimes also referred to as the Kirk effect in power. ... <看更多>
kirk effect mos 在 Design Guidelines to Achieve a Very High ESD Robustness in ... 的相關結果
These guidelines are validated on several CMOS technologies. I. Introduction ... high-injection conditions and Kirk effect occurs [4]. It. ... <看更多>
kirk effect mos 在 [PDF] High Voltage MOSFET Compact Modeling - Semantic ... 的相關結果
High Voltage MOSFET Compact Modeling ... Measurement and Modelling of High-Voltage MOS Field Effect Transistors ... Kirk effect limitations in HV-ICs. ... <看更多>
kirk effect mos 在 Design And Modeling Of Radiation Hardened Lateral Power ... 的相關結果
radiation effect, can cause threshold voltage shifts but is beyond the scope of this study. ... complimentary-metal-oxide-semiconductor (CMOS) processes, ... ... <看更多>
kirk effect mos 在 Bipolar Junction Transistors HBTs, Circuits, and MOSFETs 的相關結果
2014年10月12日 — IC = qAW nυsat n ≈ ND. “base push out”. Kirk effect ... MOS (saturated) gm ID =1 1.0 − 0.2 ... CMOS transistors for logic ... ... <看更多>
kirk effect mos 在 Proton Radiation Effects in Vertical SiGe HBTs Fabricated on ... 的相關結果
the onset of Kirk effect at high injection, and increase the frequency ... cross section of the vertical SiGe HBT on CMOS-compatible. ... <看更多>
kirk effect mos 在 Design Tradeoff of Hot Carrier Immunity and Robustness in ... 的相關結果
At the same time, kirk effect should be released with more uniform ... “A review on the ESD robustness of drain-extended MOS devices,” IEEE ... ... <看更多>
kirk effect mos 在 AgilentHBT Model (Agilent Heterojunction Bipolar Transistor ... 的相關結果
Name Description and Comments Units Default
Re Emitter resistance Ohm 2.0
Rci Intrinsic collector resistance Ohm 1.0
Rcx Extrinsic collector resistance Ohm 5.0 ... <看更多>
kirk effect mos 在 investigation of degradation in advanced 的相關結果
degradation in LDMOS compared to CMOS transistors. ... carriers (due to Kirk effect) to take place in the p-body/NWell junction, ... ... <看更多>
kirk effect mos 在 operation of silicon-germanium heterojunction bipolar ... 的相關結果
Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insula ... temperatures, which leads also to a larger Kirk effect onset current. ... <看更多>
kirk effect mos 在 Semiconductor Glossary -- Search For : kirk effect 的相關結果
Kirk effect, base pushout; apparent increase of the width of the base in bipolar transistor caused by sweeping very high number of charge carriers from the ... ... <看更多>
kirk effect mos 在 Base Transit Time, Kirk Effect, Circuit Modeling of BJT 的相關結果
Electrical Engineering 130: Integrated-Circuit Devices (Spring 2014, UC Berkeley): Lecture 17 - Base Transit Time, Kirk Effect, Circuit Modeling of BJT: ... ... <看更多>
kirk effect mos 在 Understanding wide-band MOS transistors - UCSB ECE 的相關結果
frequency analog MOS circuits that am- ... strate that fine-line MOS transistors are ... level injection and the Kirk effect, the. ... <看更多>
kirk effect mos 在 HV的结构与原理–EDMOS or LDMOS? - 天下一家 的相關結果
我们知道MOS的击穿电压是在Drain加高电压,其他三端接地,直到击 ... 其实这个就是经典的"Kirk-Effect",造成double peak的主要原因就是随着Vg的升 ... ... <看更多>
kirk effect mos 在 SiGe field effect transistors 的相關結果
The introduction to MOSFET as well as bipolar transistor operation ... collector doping concentration reduces Kirk effect, it also reduces the breakdown ... ... <看更多>
kirk effect mos 在 Power Semiconductor Devic 的相關結果
in development of lateral double diffused MOS (LDMOS) in smart power technology leading to ... Kirk effect by spreading the electron current as described in. ... <看更多>
kirk effect mos 在 SEMICONDUCTOR DEVICE PHYSICS AND DESIGN 的相關結果
6.6.1 High Injection: The Kirk Effect . ... 9 Field Effect Transistors: MOSFET ... 9.6.4 Parasitic Bipolar Transistors and Latch-up in CMOS . ... <看更多>
kirk effect mos 在 ECE 7366 Advanced Process Integration - SlidePlayer 的相關結果
3 Kirk Effect At high injection level: Electric field in the low doped C – peak field at CB junction moves to n+/n region. Electrons accumulate in B at the ... ... <看更多>
kirk effect mos 在 Submicron BCDMOS process with extended LDMOS safe ... 的相關結果
The Bipolar-CMOS-DMOS mixed process has been required for smart power applications. ... destruction by snap-back phenomenon due to Kirk-effect [5,6,7,8,9]. ... <看更多>
kirk effect mos 在 Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS ... 的相關結果
In this case, holes are generated in this area (Kirk effect) to keep electrical neutrality. We point out that this dual behavior observed as a NDRIFT 20V ... ... <看更多>
kirk effect mos 在 Nanoscale Device Physics and Technologies - utdirect.utexas ... 的相關結果
dielectric breakdown (TDDB), CMOS latchup, gate-induced leakage current of ... bandgap narrowing effect, Webster effect, Kirk effect, punchthrough and ... ... <看更多>
kirk effect mos 在 Using "Adaptive Resurf" Technique and Field Plate Working to ... 的相關結果
Improve the safe Operating Area of n-type Drain Extended MOs. Transistors ... striction of the sOA by the Kirk effect. At high current-. ... <看更多>
kirk effect mos 在 ELECTRONICS AND PHOTONICS (EP) GROUP 的相關結果
Emitter current crowding, Kirk effect. Second order effects in MOS devices: short channel effects, narrow width effects. ... <看更多>
kirk effect mos 在 Short Channel Effects - Semiconductor Engineering 的相關結果
Short-channel effects occur when the channel length is the same order of magnitude as the depletion-layer widths of the source and drain junction. In MOSFETs, ... ... <看更多>
kirk effect mos 在 56.1 Bipolar Junction Transistor 的相關結果
The MOS transistor has a high switching speed only in integrated circuits, where ... To understand the Kirk effect, consider the npn transistor in ... ... <看更多>
kirk effect mos 在 ECE 441 | Electrical & Computer Engineering | UIUC 的相關結果
Numerical device simulation of PN junction and MOS field effect transistor. ... Explain the Kirk effect in BJT's. (1). 19. Estimate the effects of base ... ... <看更多>
kirk effect mos 在 EE666 High Power Semiconductor Devices - Department of ... 的相關結果
Basic device models: Theory of bipolar and MOS transistors. ... of high-current effects in transistors; Theories of Kirk effect, crowding, pinch-in effects, ... ... <看更多>
kirk effect mos 在 Bipolar Transistor and MOSFET Device Models - Eurekaselect 的相關結果
The collector depletion region is vanished when the collector current density increases, and neutral base region widening occurs. This is called Kirk effect and ... ... <看更多>
kirk effect mos 在 Microelectronics Device Physics 的相關結果
Lecture 9: MOS Capacitor and MOSFETs. Lecture 10: Non-ideal effects ... Lecutre 4: Ramo-Shockley Theorem and the Kirk effect. ... <看更多>
kirk effect mos 在 1.3.5 Interface, Border and Oxide Traps - IuE, TU Wien 的相關結果
For instance, the HC stress may alleviate the Kirk effect [61]. ... Thus, if in a conventional MOSFET the degradation of Idlin is determined by the total ... ... <看更多>
kirk effect mos 在 Chenming-Hu ch8 - Electronic devices and circuit theory 11th 的相關結果
ahead of the MOS field-effect transistor (MOSFET) by a decade. After the ... The Kirk effect limits the peak BJT operating speed (see Fig. 8–21). ... <看更多>
kirk effect mos 在 Process and performance optimization of Triple‐RESURF ... 的相關結果
33, where the Kirk effect influence on hot carrier injection (HCI) degradations, ... modeling, and simulation of MOS device reliability. ... <看更多>
kirk effect mos 在 Frederiksen • INTUITIVE IC ELECTRONICS 的相關結果
Kirk Effect or Base Stretching ... 5.4 Detrimental Effects of Parasitic Diodes and Transistors in ... There Is a Vertical NPN Bipolar Transistor in CMOS. ... <看更多>
kirk effect mos 在 Compact Modeling of SOI-LDMOS Transistor including Impact ... 的相關結果
MOSFET. Metal Oxide Semiconductor Field Effect Transistor. SOI ... SOL2 due to Kirk effect and this is the reason for snapback. ... <看更多>
kirk effect mos 在 emitter base collector V CE W - People 的相關結果
the MOS technology steadily eroded the BJT's early dominance. ... 8.7.3 Emitter-to-Collector Transit Time and Kirk Effect. Top to bottom : VCE = 0.5V, 0.8V,. ... <看更多>
kirk effect mos 在 Introduction, Space Charge Region - Columbia | EE 的相關結果
current gain, high level injection and Kirk effect at the base collector junction, ... Metal Oxide Semiconductor Field Effect Transistors (MOSFET): In-. ... <看更多>
kirk effect mos 在 以佈局設計強化高壓橫向式擴散金氧半場效應電晶體的抗靜電 ... 的相關結果
... for High-Voltage Lateral-Diffusion MOS Field-Effect Transistors by Layout ... 區域,當大電流注入漏極後促使基極擴張(Kirk effect or base push-out effect) ... ... <看更多>
kirk effect mos 在 Design of a 100 V High-side n-channel LDMOS Transistor for ... 的相關結果
metal-oxide-semiconductor field-effect transistor (LDMOSFET) whose breakdown voltage is over ... MOS), a BJT (bipolar junction transistor), a low-TC. ... <看更多>
kirk effect mos 在 Bipolar transistor structure & BICMOS IC fabrication process 的相關結果
The invention uses selected mask sequences from the CMOS transistor ... According to the Kirk effect, at a critical current density, ... ... <看更多>
kirk effect mos 在 1.2 Conventional Power Devices - StudyLib 的相關結果
The Kirk effect is normally avoided by increasing the collector doping ... A power MOSFET is a unipolar, majority carrier, voltage controlled device. ... <看更多>
kirk effect mos 在 N型橫向擴散金氧半場效電晶體之基板電流的探討與分析 的相關結果
論文名稱(外文):, Analysis of Double Hump Substrate Current in N-type Lateral Diffuses Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET). ... <看更多>
kirk effect mos 在 BJT(1)BJT基础 - 知乎专栏 的相關結果
为正值,所以narrow base transistor受Early effect影响更大 ... 增长是没那么快的,再加上onset of the Kirk effect,使得 [公式] 下降. ... <看更多>
kirk effect mos 在 International Workshop on Power Supply on Chip 2012 的相關結果
symmetric MOSFET over multiple ... implants normally reserved for CMOS devices ... reduce Kirk-effect related SOA degradation. Drain-side engineering. ... <看更多>
kirk effect mos 在 陳和謙- Sr. RD Integration Engineer - 台灣積體電路製造股份 ... 的相關結果
200V NMOS on-state BV characteristic optimized from kirk effect restraint ... Basic platform devices : Logic MOS / BJT / HV MOS development successful, ... <看更多>
kirk effect mos 在 1. Constants & Various 2. Crystals and Current Carriers 的相關結果
effects (ohmic loss) e) Generation in ... Kirk effect threshold current ... MOSFET. In contrast to BJTs majority devices (majority carrier). ... <看更多>
kirk effect mos 在 Solid State Electronic Devices : Ben Streetman - Book ... 的相關結果
Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect ... MOSFET Scaling and Hot Electron Effects. ... Kirk Effect. ... <看更多>
kirk effect mos 在 657019-1.pdf - Pure - Eindhoven University of Technology 的相關結果
The technology used for the process is a 0.6 J..1m CMOS technology combined with ... Gummel number is much more increased for the Kirk effect than for the ... ... <看更多>
kirk effect mos 在 The Art of ANALOG LAYOUT Second Edition - GBV 的相關結果
1.4 MOS Transistors 25. 1.4.1. ThresholdVoltage 27. 1.4.2. I-V Characteristics 29 ... Other Effects of Oxide Growth and Removal 47 ... Kirk Effect 366. ... <看更多>
kirk effect mos 在 Chapter 8 Bipolar Junction Transistors - SlideServe 的相關結果
Since 1970, the high density and low-power advantage of the MOS ... Kirk effect or base widening: At high IC the base widens into the ... ... <看更多>
kirk effect mos 在 Based Vertical Double Heterojunction Bipolar Transistors with ... 的相關結果
interfaces. A band offset with ∆EC ( WSe. MoS ... rent was caused by the Kirk effect or emitter crowding effect.[1,3]. ... <看更多>
kirk effect mos 在 Introduction To Semiconductor Devices Donald Neamen ... 的相關結果
The treatment of MOS devices is brought into line with that ... Describes higher-order effects (including the Kirk effect and. Webster effect); discusses ... ... <看更多>
kirk effect mos 在 Electron and Ambipolar Transport in Organic Field-Effect ... 的相關結果
Ever since the first field-effect transistors (FETs) based on polymer 1-3 and small molecule 4,5 semiconductors were reported, interest in ... ... <看更多>
kirk effect mos 在 A Failure Levels Study of Non-Snapback ESD Devices for ... 的相關結果
(HV) or power MOS transistors is often limited not only ... Egawa effect surely improves the ESD performance of the ... line AA' represents Kirk effect. ... <看更多>
kirk effect mos 在 Silicon Carbide Junction Transistors and Schottky Rectifiers ... 的相關結果
Conversely, the absence of a MOS interface in the SiC SJT lends itself to reliable operation at ... threshold current for the onset of the Kirk effect,. ... <看更多>
kirk effect mos 在 Course Information E&CE 730 Physics and Modeling of ... 的相關結果
(including MOSFET and Thin Film Transistors) will be covered. ... punch-through, high current operation, high level injection, Kirk effect,. ... <看更多>
kirk effect mos 在 New BiCMOS driver circuit with improved analytical delay model 的相關結果
1.1.1 Comparison between Bipolar and MOS transistors . ... BJT operates in the high-level injection region (so called Kirk effect), which is typical. ... <看更多>
kirk effect mos 在 Other IC Variations 的相關結果
We begin by discussing Laterally-Diffused MOS (LDMOS). ... The Kirk effect in an LDMOS circuit can reduce the safe operating area and impact ESD performance ... ... <看更多>
kirk effect mos 在 Support Kirk Stoller's Recovery From Brain Surgery - GoFundMe 的相關結果
Blaise Rosenthal needs your support for Support Kirk Stoller's Recovery From ... I know that he had this type of effect on so many of us. ... $100; 20 mos. ... <看更多>
kirk effect mos 在 Optimum Design for Eliminating Back Gate Bias Effect of ... 的相關結果
back MOS capacitor of the new SOI diode. The optimum design of LDBL thickness ... Z. Sun, W. Sun, L. Shi, “Modeling kirk effect of RESURF. ... <看更多>
kirk effect mos 在 Aalborg Universitet Increasing emitter efficiency in 3.3-kV ... 的相關結果
The Kirk Effect in IGBTs is related with the root cause ... the MOS-channel, resulting in a fixed carrier profile, which no longer changes with time. ... <看更多>
kirk effect mos 在 Analysis and Design of a Low Voltage Si LDMOS Transistor ... 的相關結果
Lateral double diffused MOS (LDMOS) transistors are mostly used in high ... Kirk effect and suppuration for 20 V planar active gap LDMOS ... ... <看更多>
kirk effect mos 在 第一章晶體性質與半導體成長 的相關結果
effect). ○ Plank (普郎克) 研究由加熱物體發光的黑體輻 ... 了MOS 元件中少數載子的產生速率),空乏區寬度達 ... 爾克效應(Kirk effect) 而降低這是因為在基. ... <看更多>
kirk effect mos 在 Toward Quantum FinFET - 第 253 頁 - Google 圖書結果 的相關結果
The onset of Kirk effect can approximately be described by the equation below: ... may lead to early quasi-saturation in drain extended MOS devices [14]. ... <看更多>
kirk effect mos 在 Power Semiconductors - 第 266 頁 - Google 圖書結果 的相關結果
... (MOSFET), 211 Intrinsic concentration, 9 Inversion (MOS interface), 187 Ionization – energy, 6 – integral, 35, 55 JFET effect, 203, 204 Kirk-Effect ... ... <看更多>
kirk effect mos 在 電子工程學系電子研究所碩士班 - 國立交通大學機構典藏 的相關結果
電流密度(a)<(b)<(c)引發之Kirk effect 與內部電場移轉之現 ... 垂直式雙擴散金氧半場效電晶體(Vertical Double-diffused MOS 或簡稱. ... <看更多>